Whether we’re talking about flash memory or several of the other varieties of DRAM, all sources indicate that the memory market is going strong. Contract prices for 32-Gb NAND flash, for example, rose ...

In 3D NAND die stacking, chip layers are oriented vertically—as opposed to horizontal planar structures. It’s the future of next-generation chip designs. Samsung (SSNLF) is the leader in this space.

Intel and Micron have announced a new high-density, cost-effective memory chip, that could bring down the price of flash cards and USB drives. The chip uses 3-bit-per-cell (3bpc) multi-level cell (MLC ...

Today Samsung announced mass production of 3-bit per cell 3D vertical NAND (TLC V-NAND). This shouldn't come as a surprise since Samsung first started talking about the new TLC version just days after ...

It's been clear for several years that three-dimensional NAND die stacking, in which chip layers are oriented vertically as opposed to horizontal planar structures was the way forward for ...

During its latest investor meeting, Intel revealed a few more details regarding its upcoming solid-state drives that will be based on 3D NAND chips and should come in the second half of 2015. Intel co ...

Samsung Electronics on Wednesday announced that it has begun mass producing the industry’s first 3-bit, multi-level-cell (MLC) three-dimensional (3D) NAND flash memory for use in solid state drives ...

Samsung today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives ...

[section label=1. Samsung Announces 256Gb 48-Layer 3-Bit MLC 3D V-NAND] Samsung has begun mass production of the industry’s first 256Gb 48-layer 3-bit MLC (TLC)3D V-NAND flash memory just one year ...

Intel Corp. and Micron Technology Inc. today are set to unveil a jointly developed 34-nanometer, 32-gigabit NAND flash memory chip that should enable the production of cheaper solid-state drives with ...