Deep vertical holes and re-entrant features challenge the best metrology methods.
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Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors
Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the ...
For several decades, NAND Flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...
FREMONT, Calif., July 31, 2024 /PRNewswire/ -- Lam Research Corp. (Nasdaq: LRCX) today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo™ 3.0, the third ...
Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...
Multiple innovations in semiconductor processing are needed to enable 3D NAND bit density increases of about 30% per year at ever-decreasing cost per bit, all of which will be required to meet the ...
NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...
tom's Hardware on MSN
Chinese chipmaker ships record-breaking chips: YMTC quietly begins shipping 5th Gen 3D TLC NAND
Yangtze Memory Technologies Co. (YMTC) has quietly started to ship its 5th-Gen 3D NAND memory with 294 layers in total as ...
In brief: Japanese memory manufacturer Kioxia has announced it will unveil a trio of pioneering memory technologies at the IEEE International Electron Devices Meeting in San Francisco this December.
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